lithography and chip manufacturingDEVELOPING
ASML: Samsung to begin High-NA EUV volume manufacturing in 2028, TSMC in 2030
ASML says Samsung will use High-NA EUV for volume manufacturing by 2028 and TSMC from 2030. ASML is advancing a shift from 6-inch to 12-inch photomasks, aiming for a 12-inch mask pilot line by 2031 and 12-inch High-NA lithography in advanced-node production by 2033.
- ASML says Samsung will use High-NA EUV for volume manufacturing by 2028, with TSMC following from 2030.
- Intel and SK hynix have used High-NA EUV briefly; ASML states it delivers faster production, higher yields and denser wafers.
1 sources82% confidence